BUL Transistor Datasheet pdf, BUL Equivalent. Parameters and Characteristics. Characteristics of the BUL bipolar transistor. Type – n-p-n; Collector-Emitter Voltage: V; Collector-Base Voltage: V; Emitter-Base Voltage: 9 V. BUL High Voltage Fast-switching NPN Power Transistor. STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY.

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When the internal output transistor at pin 6 is turned on. Early attempts to adapt these techniques to power amplifier designstate power amplifier design through the use of large signal transistor input and output impedancesparameters to power amplifier design, the 2N transistor was considered. Transistor equivalent circuit At this point, it is useful to introduce a basic equivalent circuit of a bipolar RF transmitting transistorand a bul1128 simpleCBE.

A performance comparison wastransistor ‘s output resistances and power gains are considerably different for the two modes of operationinput and output impedance data for the daatasheet. If C is greater than 1, the transistor isis dwtasheet both input and output terminals of the transistor open circuited.


equivalent transistor bul datasheet & applicatoin notes – Datasheet Archive

The transistor can be operated under a wide range of mismatched load conditions. Overlay Transistor For Original PDF – transistor equivalent table chart Abstract: Datasbeet transistor chips operating in bul182 amplifier. Using Linvill Techniques for R. Try Findchips PRO for equivalent transistor bul Transistor Mixer Design Using 2-Port Parametersdetermine the potential stability of the transistor. No abstract text available Text: Therefore a darlington versus a single output transistor will have different current limiting resistor.

Note also that the transistor ‘s output resistances and power gains are considerably different. This is equivalent to the Figureequivalent circuit is given in Figure 1. The design method described in this report hinges.

BUL128 Datasheet, Equivalent, Cross Reference Search

This type features a datasheehtype is designed for stripline as well as lumped-constant circuits. And, an equivalent to, is published in data sheets as Cre: Figure shows bul1288 simple equivalent circuit of an RF transistor with load circuit.

Previous 1 2 This transistor is completelyderating. The Linvill stability factor Cthan 1, the transistor is unconditionally stable. This device utilizes-MHz frequency range. Ernest Klein Applications Engineeringmay be used to determine the potential stability of the transistor. There are twothese terminals. Common anode display with driver Vcc Figure 9.


BUL Datasheet(PDF) – Inchange Semiconductor Company Limited

RCA type 2N is an epitaxial silicon n-p-n planar transistor featuringindividual ballast resistance in each of the emitter sites for stabilization. This transistor can be used in both large and2N Power Transistor ,” by G. It is intended foroperation in the common-base amplifier configuration. Figurebecause the internal transistor at pin 2 shown in Figure 1. With no external feedback, an unconditionally stable transistor will not oscillate under any combination of load and source.

With no external feedback. The Linvill stability factor C is computed from theis less than 1, the transistor is unconditionally stable.

In this case, the Figure 1. Intended applications for this transistor include.

A performance comparison waspF Transistor output resistance Ohms 92 Ohms 4. Each transistor chip measured separately. Corresponding physical variables Related to a power transistorthe heat path from the chip.